171-00-010,IGBT module 34 mm 600 V, BSM 200GB60DLC, Infineon
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BSM 200GB60DLC - 

IGBT module 34 mm 600 V, BSM 200GB60DLC, Infineon

Infineon BSM 200GB60DLC
声明:图片仅供参考,请以实物为准!
制造商产品编号:
BSM 200GB60DLC
仓库库存编号:
171-00-010
技术数据表:
View BSM 200GB60DLC Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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Related Products: Diode module SEMIPACK 2 1600 V | Diode module SEMIPACK 0 1200 V | IGBT module EconoPACK?2 1200 V | IGBT module 62 mm 1200 V | IGBT module SEMITRANS 3 1200 V
Related Categories: Transistors | Transistors - Bipolar | Diodes | Discrete Modules | Transistors - MOSFETs
Related Manufacturers: Texas Instruments | Microchip | IR | ST | Diotec
电话:400-900-3095
QQ:800152669

BSM 200GB60DLCFamily Information

  • Voltage-controlled
  • Simple parallel switching
  • High overload capacity
  • High switching frequencies
  • The actuation power and robustness correspond to the power MOSFET
  • Each IGBT has an anti-parallel diode
  • Some modules with built-in power rectifier and braking chopper (PIM) for mains voltages of 230 to 690 V and above

BSM 200GB60DLC产地与重量

Country of origin Hong Kong (HK)
Manufacturer Infineon
Gross weight (incl. package) 155.0 Gram
Dimensions (incl. package) 100 x 40 x 30 MM
Customs number 8541290000
UNSPSC (v5.03) 32111609
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