171-11-071,MOSFET N, 100 V 200 A 800 W TO-264, IXTK200N10P, Ixys
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IXTK200N10P - 

MOSFET N, 100 V 200 A 800 W TO-264, IXTK200N10P, Ixys

Ixys IXTK200N10P
声明:图片仅供参考,请以实物为准!
制造商:
Ixys Ixys
制造商产品编号:
IXTK200N10P
仓库库存编号:
171-11-071
技术数据表:
View IXTK200N10P Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

IXTK200N10P技术参数

Polarity N
Drain source voltage 100 V
Drain current 200 A
Closing resistance 7.5 mOhm
Housing type TO-264

IXTK200N10P产品信息

Operating temperature -55...+175 °C
Power dissipation 800 W
Variants Enhancement mode
Recovery time 100 ns
Related Manufacturers: Diotec | IR | ST | Vishay | Crydom
Related Products: MOSFET N, 25 V 0.22 A 350 mW SOT-23 | MOSFET N, 40 V 3.6 A 1.3 W SOT-23 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 30 V 2.2 A 500 mW SOT-23
Related Categories: Rectifier Diodes | Thyristors & Triacs | Diodes | Transistors - MOSFETs | Solid State Relays & Contactors
电话:400-900-3095
QQ:800152669

IXTK200N10P产地与重量

Country of origin United States (US)
Manufacturer Ixys
Gross weight (incl. package) 12.0 Gram
Dimensions (incl. package) 50 x 20 x 5 MM
Customs number 8541290000
UNSPSC (v5.03) 32111603
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