171-31-362,MOSFET N, 200 V 120 A 600 W SOT-227B, IXFN120N20, Ixys
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IXFN120N20 - 

MOSFET N, 200 V 120 A 600 W SOT-227B, IXFN120N20, Ixys

Ixys IXFN120N20
声明:图片仅供参考,请以实物为准!
制造商:
Ixys Ixys
制造商产品编号:
IXFN120N20
仓库库存编号:
171-31-362
技术数据表:
View IXFN120N20 Datasheet Datasheet
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IXFN120N20技术参数

Polarity N
Drain source voltage 200 V
Drain current 120 A
Closing resistance 17 mOhm
Housing type SOT-227B

IXFN120N20产品信息

Operating temperature -55...+150 °C
Power dissipation 600 W
Variants Enhancement mode
Recovery time 250 ns
Related Products: MOSFET N, 25 V 0.22 A 350 mW SOT-23 | MOSFET N, 40 V 3.6 A 1.3 W SOT-23 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 30 V 2.2 A 500 mW SOT-23
Related Categories: Rectifier Diodes | Thyristors & Triacs | Diodes | Transistors - MOSFETs | Solid State Relays & Contactors
Related Manufacturers: Diotec | IR | ST | Vishay | Crydom
电话:400-900-3095
QQ:800152669

IXFN120N20Family Information

  • The HiPerFET? power MOSFETs are now also available as Q class. For this series a lower line capacitance was realized due to a new chip. Thus, the transistor can also be switched at high frequencies with a lower drive performance.
  • High-performance MOSFETs with fast reverse diodes
  • Designed for low dv/dt sensitivity during current commutation
  • No external free-wheeling diodes necessary for bridge configuration with an inductive load

IXFN120N20产地与重量

Country of origin United States (US)
Manufacturer Ixys
Gross weight (incl. package) 30.0 Gram
Dimensions (incl. package) 39 x 21 x 18 MM
Customs number 8541290000
UNSPSC (v5.03) 32111603
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