171-02-327,MOSFET N, 30 V 25 A 3.1 W PQFN-8 (5x6), IRFH7932TR2PBF, IR
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IRFH7932TR2PBF - 

MOSFET N, 30 V 25 A 3.1 W PQFN-8 (5x6), IRFH7932TR2PBF, IR

IR IRFH7932TR2PBF
声明:图片仅供参考,请以实物为准!
制造商:
IR IR
制造商产品编号:
IRFH7932TR2PBF
仓库库存编号:
171-02-327
技术数据表:
View IRFH7932TR2PBF Datasheet Datasheet
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IRFH7932TR2PBF技术参数

Polarity N
Drain source voltage 30 V
Drain current 25 A
Closing resistance 3.3 mOhm
Housing type PQFN-8 (5x6)

IRFH7932TR2PBF产品信息

Operating temperature -55...+150 °C
Power dissipation 3.1 W
Recovery time 32 ns
Related Categories: Transistors - MOSFETs | Interfaces | Transistors - IGBT | Transistors | Drivers
Related Products: MOSFET N, 25 V 0.22 A 350 mW SOT-23 | MOSFET N, 40 V 3.6 A 1.3 W SOT-23 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 60 V 16 A 45 W TO-220 | MOSFET N, 30 V 2.2 A 500 mW SOT-23
Related Manufacturers: Texas Instruments | ST | Linear Technology | Microchip | Crydom
电话:400-900-3095
QQ:800152669

IRFH7932TR2PBF产地与重量

Country of origin Thailand (TH)
Manufacturer IR
Gross weight (incl. package) 0.5 Gram
Dimensions (incl. package) 12 x 8 x 2 MM
Customs number 8541290000
UNSPSC (v5.03) 32111603
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